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general description the MAX2010 adjustable rf predistorter is designed to improve power amplifier (pa) adjacent-channel power rejection (acpr) by introducing gain and phase expan- sion in a pa chain to compensate for the pa? gain and phase compression. with its +23dbm maximum input power level and wide adjustable range, the MAX2010 can provide up to 12db of acpr improvement for power amplifiers operating in the 500mhz to 1100mhz frequency band. higher frequencies of operation can be achieved with this ic? counterpart, the max2009. the MAX2010 is unique in that it provides up to 6db of gain expansion and 21 of phase expansion as the input power is increased. the amount of expansion is config- urable through two independent sets of control: one set adjusts the gain expansion breakpoint and slope, while the second set controls the same parameters for phase. with these settings in place, the linearization circuit can be run in either a static set-and-forget mode, or a more sophisticated closed-loop implementation can be employed with real-time software-controlled distortion correction. hybrid correction modes are also possible using simple lookup tables to compensate for factors such as pa temperature drift or pa loading. the MAX2010 comes in a 28-pin thin qfn exposed pad (ep) package (5mm x 5mm) and is specified for the extended (-40? to +85?) temperature range. applications cdma2000, gsm/edge, and iden base stations feed-forward pa architectures digital baseband predistortion architectures military applications features up to 12db acpr improvement* independent gain and phase expansion controls gain expansion up to 6db phase expansion up to 21 500mhz to 1100mhz frequency range exceptional gain and phase flatness group delay <2.4ns (gain and phase sections combined) 0.03ns group delay ripple over a 100mhz band capable of handling input drives up to +23dbm on-chip temperature variation compensation single +5v supply low power consumption: 75mw (typ) fully integrated into small 28-pin thin qfn package * performance dependent on amplifier, bias, and modulation. MAX2010 500mhz to 1100mhz adjustable rf predistorter ________________________________________________________________ maxim integrated products 1 28 27 26 25 24 23 22 7 6 5 4 3 2 1 15 16 17 18 19 20 21 8 9 10 11 12 13 14 MAX2010 gain control phase control gnd* gnd* ing gnd* gnd* outp gnd* v ccg gnd* pbraw pbexp pbin gnd* v ccp gnd* inp gnd* pfs1 pfs2 pdcs1 pdcs2 gnd* outg gnd* gcs gfs gbp gnd* *internally connected to exposed ground paddle. functional diagram/ pin configuration ordering information 19-2930; rev 0; 8/03 for pricing, delivery, and ordering information, please contact maxim/dallas direct! at 1-888-629-4642, or visit maxim? website at www.maxim-ic.com. * ep = exposed paddle. part temp range pin-package MAX2010eti-t -40 c to +85 c 28 thin qfn-ep* cdma2000 is a trademark of telecommunications industry assoc.
MAX2010 500mhz to 1100mhz adjustable rf predistorter 2 _______________________________________________________________________________________ absolute maximum ratings dc electrical characteristics (MAX2010 ev kit; v ccg = v ccp = +4.75v to +5.25v; no rf signal applied; inp, ing, outp, outg are ac-coupled and terminated to 50 ? . v pf_s1 = open; pbexp shorted to pbraw; v pdcs1 = v pdcs2 = 0.8v; v pbin = v gbp = v gcs = gnd; v gfs = v ccg ;t a = -40 c to +85 c. typical values are at v ccg = v ccp = +5.0v, t a = +25 c, unless otherwise noted.) stresses beyond those listed under ?bsolute maximum ratings?may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specificatio ns is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. v ccg , v ccp to gnd ..............................................-0.3v to +5.5v ing, outg, gcs, gfs, gbp to gnd......-0.3v to (v ccg + 0.3v) inp, outp, pfs_, pdcs_, pbraw, pbexp, pbin to gnd ............................-0.3v to (v ccp + 0.3v) input (ing, inp, outp, outg) level ............................+23dbm pbexp output current ........................................................ 1ma continuous power dissipation (t a = +70 c) 28-pin thin qfn-ep (derate 21mw/ c above +70 c) ...............................1667mw operating temperature range ...........................-40 c to +85 c junction temperature ......................................................+150 c storage temperature range .............................-65 c to +150 c lead temperature (soldering 10s) ..................................+300 c parameter conditions min typ max units supply voltage v ccg , v ccp 4.75 5.25 v v ccp 5.8 7 supply current v ccg 10 12.1 ma pbin, pbraw 0 v ccp analog input voltage range gbp, gfs, gcs 0 v ccg v v gfs = v gcs = v pbraw = 0v -2 +2 v gbp = 0 to +5v -100 +170 analog input current v pbin = 0 to +5v -100 +220 a logic-input high voltage pdcs1, pdcs2 (note 1) 2.0 v logic-input low voltage pdcs1, pdcs2 (note 1) 0.8 v logic input current -2 +2 a
MAX2010 500mhz to 1100mhz adjustable rf predistorter _______________________________________________________________________________________ 3 ac electrical characteristics (MAX2010 ev kit, v ccg = v ccp = +4.75v to +5.25v, 50 ? environment, p in = -20dbm, f in = 500mhz to 1100mhz, v gcs = +1.0v, v gfs = +5.0v, v gbp = +1.2v, v pbin = v pdcs1 = v pdcs2 = 0v, v pf_s1 = +5v, v pbraw = v pbexp ,t a = -40 c to +85 c. typical val- ues are at f in = 880mhz, v ccg = v ccp = +5v, t a = +25 c, unless otherwise noted.) (notes 1, 2) parameter conditions min typ max units operating frequency range 500 1100 mhz vswr ing, inp, outg, outp 1.3:1 phase control section nominal gain -5.5 db gain variation over temperature t a = -40 c to +85 c-1.7db gain flatness over a 100mhz band 0.1 db phase-expansion breakpoint maximum v pbin = +5v 23 dbm phase-expansion breakpoint minimum v pbin = 0v 0.7 dbm phase-expansion breakpoint variation over temperature t a = -40 c to +85 c 1.5 db v pf_s1 = +5v, v pdcs1 = v pdcs2 = 0v, p in = -20 dbm to +23 dbm 21 v pdcs1 = 5v, v pdcs2 = 0v, v pf_s1 = +1.5v 16 v pdcs1 = 0v, v pdcs2 = 5v, v pf_s1 = +1.5v 14 phase expansion v pf_s1 = 0v, v pdcs1 = v pdcs2 = +5v, p in = -20dbm to +23dbm 6 degrees phase-expansion slope maximum p in = +9dbm 1.4 degrees /db phase-expansion slope minimum v pf_s1 = 0v, v pdcs1 = v pdcs2 = +5v, p in = +9dbm 0.6 degrees /db phase-slope variation over temperature p in = +9dbm, t a = -40 c to +85 c 0.05 degrees /db phase ripple over a 100mhz band, deviation from linear phase 0.02 degrees noise figure 5.5 db absolute group delay interconnects de-embedded 1.3 ns group delay ripple over a 100mhz band 0.01 ns parasitic gain expansion p in = -20dbm to +23dbm +0.4 db
MAX2010 500mhz to 1100mhz adjustable rf predistorter 4 _______________________________________________________________________________________ note 1: guaranteed by design and characterization. note 2: all limits reflect losses and characteristics of external components shown in the typical application circuit , unless otherwise noted. ac electrical characteristics (continued) (MAX2010 ev kit, v ccg = v ccp = +4.75v to +5.25v, 50 ? environment, p in = -20dbm, f in = 500mhz to 1100mhz, v gcs = +1.0v, v gfs = +5.0v, v gbp = +1.2v, v pbin = v pdcs1 = v pdcs2 = 0v, v pf_s1 = +5v, v pbraw = v pbexp ,t a = -40 c to +85 c. typical val- ues are at f in = 880mhz, v ccg = v ccp = +5v, t a = +25 c, unless otherwise noted.) (notes 1, 2) parameter conditions min typ max units gain control section -14.9 v gcs = 0v, v gfs = +5v -24.3 nominal gain v gcs = +5v, v gfs = 0v -7.6 db gain variation over temperature t a = -40 c to +85 c-1.4db gain flatness over a 100mhz band 0.2 db gain-expansion breakpoint maximum v gbp = +5v 23 dbm gain-expansion breakpoint minimum v gbp = +0.5v -2.5 dbm gain-expansion breakpoint variation over temperature t a = -40 c to +85 c-0.5db v gfs = +5v, p in = -20dbm to +23dbm 5.3 gain-expansion v gfs = 0v, p in = -20dbm to +23dbm 3.1 db v gfs = +5v, p in = +15dbm 0.43 gain-expansion slope v gfs = +0v, p in = +15dbm 0.23 db/db gain-slope variation over temperature p in = +15dbm, t a = -40 c to +85 c -0.01 db/db noise figure 14.9 db absolute group delay interconnects de-embedded 1.12 ns group delay ripple over a 100mhz band 0.02 ns phase ripple over a 100mhz band, deviation from linear phase 0.09 degrees parasitic phase expansion p in = -20dbm to +23dbm +3 degrees
MAX2010 500mhz to 1100mhz adjustable rf predistorter _______________________________________________________________________________________ 5 5.6 5.9 5.8 5.7 6.0 6.1 6.2 6.3 6.4 6.5 6.6 4.75 4.95 4.85 5.05 5.15 5.25 supply current vs. supply voltage MAX2010 toc01 supply voltage (v) supply current (ma) t a = +85 c t a = +25 c t a = -40 c small-signal input return loss vs. frequency MAX2010 toc02 50 40 20 10 30 0 input return loss (db) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 frequency (ghz) a = v pdcs1 = v pdcs2 = v pf_s1 = 0v b = v pdcs1 = v pdcs2 = 0v, v pf_s1 = 5v c = v pdcs1 = v pdcs2 = 5v, v pf_s1 = 0v d = v pdcs1 = v pdcs2 = v pf_s1 = 5v b d c a small-signal output return loss vs. frequency MAX2010 toc03 50 40 20 10 30 0 output return loss (db) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 frequency (ghz) a = v pdcs1 = v pdcs2 = v pf_s1 = 0v b = v pdcs1 = v pdcs2 = 0v, v pf_s1 = 5v c = v pdcs1 = v pdcs2 = 5v, v pf_s1 = 0v d = v pdcs1 = v pdcs2 = v pf_s1 = 5v b d c a large-signal input return loss vs. frequency MAX2010 toc04 50 40 20 10 30 0 input return loss (db) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 frequency (ghz) p in = +15dbm a = v pdcs1 = v pdcs2 = v pf_s1 = 0v b = v pdcs1 = v pdcs2 = 0v, v pf_s1 = 5v c = v pdcs1 = v pdcs2 = 5v, v pf_s1 = 0v d = v pdcs1 = v pdcs2 = v pf_s1 = 5v b d c a large-signal output return loss vs. frequency MAX2010 toc05 50 40 20 10 30 0 output return loss (db) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 frequency (ghz) p in = +15dbm a = v pdcs1 = v pdcs2 = v pf_s1 = 0v b = v pdcs1 = v pdcs2 = 0v, v pf_s1 = 5v c = v pdcs1 = v pdcs2 = 5v, v pf_s1 = 0v d = v pdcs1 = v pdcs2 = v pf_s1 = 5v b d c a small-signal gain vs. frequency MAX2010 toc06 frequency (ghz) gain (db) 1.0 0.9 0.8 0.7 0.6 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -7.0 0.5 1.1 t a = +85 c t a = +25 c t a = -40 c typical operating characteristics phase control section (MAX2010 ev kit, v ccp = +5.0v, p in = -20dbm, v pbin = 0v, v pf_s1 = +5.0v, v pdcs1 = v pdcs2 = 0v, f in = 880mhz, t a = +25 c unless otherwise noted.)
MAX2010 500mhz to 1100mhz adjustable rf predistorter 6 _______________________________________________________________________________________ small-signal gain vs. frequency MAX2010 toc07 frequency (ghz) gain (db) 1.0 0.9 0.8 0.7 0.6 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -7.0 0.5 1.1 v ccp = 4.75v, 5.0v, 5.25v small-signal gain vs. coarse slope MAX2010 toc08 coarse slope (v) gain (db) pdcs1 = 0 pdcs2 = 5 pdcs1 = 5 pdcs2 = 0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -7.0 pdcs1 = 0 pdcs2 = 0 pdcs1 = 5 pdcs2 = 5 v pf_s1 = 0v v pf_s1 = 1.5v v pf_s1 = 5v small-signal gain vs. coarse slope MAX2010 toc09 coarse slope (v) gain (db) pdcs1 = 0 pdcs2 = 5 pdcs1 = 5 pdcs2 = 0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -7.0 pdcs1 = 0 pdcs2 = 0 pdcs1 = 5 pdcs2 = 5 t a = -40 c t a = +25 c t a = +85 c group delay vs. frequency MAX2010 toc10 frequency (ghz) delay (ns) 1.0 0.9 0.8 0.7 0.6 1.25 1.30 1.35 1.40 1.45 1.50 1.20 0.5 1.1 a = v pdcs1 = v pdcs2 = v pf_s1 = 0v b = v pdcs1 = v pdcs2 = 0v, v pf_s1 = 5v c = v pdcs1 = v pdcs2 = 5v, v pf_s1 = 0v d = v pdcs1 = v pdcs2 = v pf_s1 = 5v interconnects de-embedded a c d b noise figure vs. frequency MAX2010 toc11 noise figure (db) frequency (ghz) a = v pdcs1 = v pdcs2 = v pf_s1 = 0v b = v pdcs1 = v pdcs2 = 0v, v pf_s1 = 5v c = v pdcs1 = v pdcs2 = 5v, v pf_s1 = 0v d = v pdcs1 = v pdcs2 = v pf_s1 = 5v 1.0 0.9 0.8 0.7 0.6 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 5.0 0.5 1.1 a c b d supply current vs. input power MAX2010 toc12 input power (dbm) supply current (ma) a = v pbin = 0v b = v pbin = 0.5v c = v pbin = 1.0v d = v pbin = 1.5v e = v pbin = 3.0v 20 16 12 8 4 5.75 5.80 5.85 5.90 5.95 6.00 5.70 024 b c a d e typical operating characteristics (continued) phase control section (continued) (MAX2010 ev kit, v ccp = +5.0v, p in = -20dbm, v pbin = 0v, v pf_s1 = +5.0v, v pdcs1 = v pdcs2 = 0v, f in = 880mhz, t a = +25 c unless otherwise noted.)
MAX2010 500mhz to 1100mhz adjustable rf predistorter _______________________________________________________________________________________ 7 gain expansion vs. input power MAX2010 toc13 input power (dbm) gain (db) 38 -2 13 18 23 a = v pbin = 0v b = v pbin = 0.5v c = v pbin = 1.0v d = v pbin = 1.5v e = v pbin = 2.0v f = v pbin = 2.5v -5.5 -5.3 -5.1 -4.9 -4.7 -4.5 -5.7 -7 a b c d e f phase expansion vs. input power MAX2010 toc14 input power (dbm) phase (degrees) 38 -2 13 18 23 a = v pbin = 0v b = v pbin = 0.5v c = v pbin = 1.0v d = v pbin = 1.5v e = v pbin = 2.0v f = v pbin = 2.5v -7 a b c d e f -15 -10 -5 0 5 10 15 -20 -5.7 -5.1 -5.5 -4.7 -5.3 -4.9 -4.5 gain expansion vs. input power MAX2010 toc15 input power (dbm) gain (db) -7 3 8 -2 13 18 23 a = v pdcs1 = v pdcs2 = 0v b = v pdcs1 = 5v, v pdcs2 = 0v b d c a c = v pdcs1 = 0v, v pdcs2 = 5v d = v pdcs1 = v pdcs2 = 5v -5.7 -4.5 gain expansion vs. input power MAX2010 toc16 input power (dbm) gain (db) -5.4 -5.1 -7 3 8 -2 13 18 23 a = v pf_s1 = 0v b = v pf_s1 = 0.5v c = v pf_s1 = 1.0v d = v pf_s1 = 1.5v e = v pf_s1 = 2.0v f = v pf_s1 = 5.0v v pdcs1 = 5.0v f -4.8 e d c b a phase expansion vs. input power MAX2010 toc17 input power (dbm) phase (degrees) 38 -2 13 18 23 a = v pf_s1 = 0v b = v pf_s1 = 0.5v c = v pf_s1 = 1.0v d = v pf_s1 = 1.5v e = v pf_s1 = 2.0v f = v pf_s1 = 5.0v v pdcs1 = 5.0v -7 d e f a b c -15 -10 -5 0 5 10 15 -20 phase expansion vs. input power MAX2010 toc18 input power (dbm) phase (degrees) 38 -2 13 18 23 a = v pdcs1 = v pdcs2 = 0v b = v pdcs1 = 5v, v pdcs2 = 0v c = v pdcs1 = 0v, v pdcs2 = 5v d = v pdcs1 = v pdcs2 = 5v -7 a b d c -15 -10 -5 0 5 10 15 -20 typical operating characteristics (continued) phase control section (continued) (MAX2010 ev kit, v ccp = +5.0v, p in = -20dbm, v pbin = 0v, v pf_s1 = +5.0v, v pdcs1 = v pdcs2 = 0v, f in = 880mhz, t a = +25 c unless otherwise noted.)
MAX2010 500mhz to 1100mhz adjustable rf predistorter 8 _______________________________________________________________________________________ gain expansion vs. input power MAX2010 toc19 input power (dbm) gain (db) -7 3 8 -2 13 18 23 v pdcs1 = 5.0, v pf_s1 = 1.5v -5.6 -5.4 -5.2 -5.0 -4.8 -4.6 -4.4 -4.2 -4.0 -5.8 t a = -40 c t a = +25 c t a = +85 c -25 0 phase expansion vs. input power input power (dbm) phase (degrees) -15 -10 -5 -20 -7 3 8 -2 13 18 23 v pdcs1 = 5.0, v pf_s1 = 1.5v t a = -40 c t a = +25 c t a = +85 c MAX2010 toc20 5.6 5.9 5.8 5.7 6.2 6.1 6.0 6.5 6.4 6.3 6.6 4.75 4.95 4.85 5.05 5.15 5.25 supply current vs. supply voltage MAX2010 toc21 supply voltage (v) supply current (ma) t a = +85 c t a = +25 c t a = -40 c small-signal input return loss vs. frequency MAX2010 toc22 frequency (ghz) input return loss (db) a = v gcs = 0v, v gfs = 0v b = v gcs = 0v, v gfs = 5v c = v gcs = 5v, v gfs = 0v d = v gcs = 5v, v gfs = 5v 1.0 0.9 0.8 0.7 0.6 40 30 20 10 0 50 0.5 1.1 c, d a, b small-signal output return loss vs. frequency MAX2010 toc23 frequency (ghz) output return loss (db) a = v gcs = 0v, v gfs = 0v b = v gcs = 0v, v gfs = 5v c = v gcs = 5v, v gfs = 0v d = v gcs = 5v, v gfs = 5v 1.0 0.9 0.8 0.7 0.6 40 30 20 10 0 50 0.5 1.1 c, d a, b typical operating characteristics gain control section (MAX2010 ev kit, v ccg = +5.0v, p in = -20dbm, v gbp = +1.2v, v gfs = +5.0v, v gcs = +1.0v, f in = 880mhz, t a = +25 c, unless otherwise noted.) typical operating characteristics (continued) phase control section (continued) (MAX2010 ev kit, v ccp = +5.0v, p in = -20dbm, v pbin = 0v, v pf_s1 = +5.0v, v pdcs1 = v pdcs2 = 0v, f in = 880mhz, t a = +25 c unless otherwise noted.)
MAX2010 500mhz to 1100mhz adjustable rf predistorter _______________________________________________________________________________________ 9 large-signal output return loss vs. frequency MAX2010 toc25 frequency (ghz) output return loss (db) a = v gcs = 0v, v gfs = 0v b = v gcs = 0v, v gfs = 5v c = v gcs = 5v, v gfs = 0v d = v gcs = 5v, v gfs = 5v 1.0 0.9 0.8 0.7 0.6 40 30 20 10 0 50 0.5 1.1 a b d c p in = +15dbm -20 -18 -19 -16 -17 -14 -13 -15 -12 small-signal gain vs. frequency MAX2010 toc26 frequency (ghz) gain (db) 1.0 0.9 0.8 0.7 0.6 0.5 1.1 t a = +25 c t a = -40 c t a = +85 c -20 -18 -19 -16 -17 -14 -13 -15 -12 small-signal gain vs. frequency MAX2010 toc27 frequency (ghz) gain (db) 1.0 0.9 0.8 0.7 0.6 0.5 1.1 v ccg = 4.75v, 5.0v, 5.25v -30 -25 -15 -20 -10 -5 0 034 2 15 small-signal gain vs. v gcs MAX2010 toc28 v gcs (v) gain (db) v gfs = 0v, 1.5v, 5.0v 034 2 15 small-signal gain vs. v gcs MAX2010 toc29 v gcs (v) gain (db) t a = -40 c -30 -25 -15 -20 -10 -5 0 t a = +25 c v gfs = +1.5v t a = +85 c large-signal input return loss vs. frequency MAX2010 toc24 frequency (ghz) input return loss (db) a = v gcs = 0v, v gfs = 0v b = v gcs = 0v, v gfs = 5v c = v gcs = 5v, v gfs = 0v d = v gcs = 5v, v gfs = 5v 1.0 0.9 0.8 0.7 0.6 40 30 20 10 0 50 0.5 1.1 d a c b p in = +15dbm typical operating characteristics (continued) gain control section (continued) (MAX2010 ev kit, v ccp = +5.0v, p in = -20dbm, v pbin = 0v, v pf_s1 = +5.0v, v pdcs1 = v pdcs2 = 0v, f in = 880mhz, t a = +25 c unless otherwise noted.)
MAX2010 500mhz to 1100mhz adjustable rf predistorter 10 ______________________________________________________________________________________ noise figure vs. frequency MAX2010 toc31 noise figure (db) frequency (ghz) a = v gcs = 0v, v gfs = 0v b = v gcs = 0v, v gfs = 5v c = v gcs = 1.5v, v gfs = 5v d = v gcs = 5v, v gfs = 0v e = v gcs = 5v, v gfs = 5v 1.0 0.9 0.8 0.7 0.6 10 15 20 25 30 5 0.5 1.1 a c e b d supply current vs. input power MAX2010 toc32 5 10 20 25 15 30 supply current (ma) 04 8 12 20 16 24 input power (dbm) a = v gbp = 0v b = v gbp = 0.5v c = v gbp = 1.0v d = v gbp = 1.5v e = v gbp = 3.0v c a d e b gain expansion vs. input power MAX2010 toc33 -20 -11 -14 -8 -17 -5 gain (db) -7 -2 3 818 13 23 input power (dbm) a = v gbp = 0v b = v gbp = 0.5v c = v gbp = 1.0v d = v gbp = 1.5v b c d e a e = v gbp = 2.0v f = v gbp = 2.5v g = v gbp = 3.5v h = v gbp = 5.0v f g h phase expansion vs. input power MAX2010 toc34 -15 -9 -11 -7 -13 -5 phase (degrees) -7 -2 3 818 13 23 input power (dbm) a = v gbp = 0v b = v gbp = 0.5v c = v gbp = 1.0v d = v gbp = 1.5v e = v gbp = 2.0v f = v gbp = 2.5v g = v gbp = 3.5v h = v gbp = 5.0v a b h g f c d e typical operating characteristics (continued) gain control section (continued) (MAX2010 ev kit, v ccp = +5.0v, p in = -20dbm, v pbin = 0v, v pf_s1 = +5.0v, v pdcs1 = v pdcs2 = 0v, f in = 880mhz, t a = +25 c unless otherwise noted.) group delay vs. frequency MAX2010 toc30 frequency (ghz) interconnects de-embedded delay (ns) a = v gcs = 0v, v gfs = 0v b = v gcs = 0v, v gfs = 5v c = v gcs = 5v, v gfs = 0v d = v gcs = 5v, v gfs = 5v 1.0 0.9 0.8 0.7 0.6 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.8 0.5 1.1 c, d a b
MAX2010 500mhz to 1100mhz adjustable rf predistorter ______________________________________________________________________________________ 11 phase expansion vs. input power MAX2010 toc37 -20 -10 10 0 20 30 phase (degrees) -7 -2 3 818 13 23 input power (dbm) a = v gcs = 0v b = v gcs = 0.5v c = v gcs = 1.0v d = v gcs = 1.5v e = v gcs = 2.0v f = v gcs = 5.0v e c d f a, b phase expansion vs. input power MAX2010 toc38 -15 -13 -14 -9 -10 -11 -12 -7 -8 -5 -6 phase (degrees) -7 -2 3 818 13 23 input power (dbm) a = v gfs = 0v b = v gfs = 0.5v c = v gfs = 1.0v d = v gfs = 1.5v e = v gfs = 2.0v f = v gfs = 5.0v a, b c d f e gain expansion vs. input power MAX2010 toc39 -17 -16 -15 -14 -11 -9 -13 -12 -10 -8 gain (db) -7 -2 3 818 13 23 input power (dbm) t a = -40 c t a = +25 c t a = +85 c phase expansion vs. input power MAX2010 toc40 -15 -13 -14 -12 -11 -8 -6 -10 -9 -7 -5 phase (degrees) -7 -2 3 818 13 23 input power (dbm) t a = -40 c t a = +25 c t a = +85 c gain expansion vs. input power MAX2010 toc35 -20 -17 -11 -14 -8 -5 gain (db) -7 -2 3 818 13 23 input power (dbm) a = v gfs = 0v b = v gfs = 0.5v c = v gfs = 1.0v f d = v gfs = 1.5v e = v gfs = 2.0v f = v gfs = 5.0v e c d a, b gain expansion vs. input power MAX2010 toc36 -25 -21 -23 -13 -7 -17 -15 -9 -11 -19 -5 gain (db) -7 -2 3 818 13 23 input power (dbm) a = v gcs = 0v b = v gcs = 0.5v c = v gcs = 1.0v d = v gcs = 1.5v e = v gcs = 2.0v f = v gcs = 2.5v e d c a, b f typical operating characteristics (continued) gain control section (continued) (MAX2010 ev kit, v ccp = +5.0v, p in = -20dbm, v pbin = 0v, v pf_s1 = +5.0v, v pdcs1 = v pdcs2 = 0v, f in = 880mhz, t a = +25 c unless otherwise noted.)
MAX2010 500mhz to 1100mhz adjustable rf predistorter 12 ______________________________________________________________________________________ detailed description the MAX2010 adjustable predistorter can provide up to 12db of acpr improvement for high-power amplifiers by introducing gain and phase expansion to compen- sate for the pa s gain and phase compression. the MAX2010 enables real-time software-controlled distor- tion correction, as well as set-and-forget tuning through the adjustment of the expansion starting point (break- point) and the rate of expansion (slope). the gain and phase breakpoints can be set over a 20db input power range. the phase expansion slope is variable from 0.3 /db to 2.0 /db and can be adjusted for a maximum of 21 of phase expansion. the gain expansion slope is variable from 0.1db/db to 0.53db/db and can be adjusted for a maximum of 6db gain expansion. the following sections describe the tuning methodology best implemented with a class a amplifier. other classes of operation may require significantly different settings. pin description pin name function 1, 2, 4, 5, 7, 8, 10, 16, 20, 22, 26, 28 gnd ground. internally connected to the exposed paddle. 3 ing rf gain input. connect ing to a coupling capacitor if it is not connected to outp. ing is interchangeable with outg. 6 outp rf phase output. connect outp to a coupling capacitor if it is not connected to inp. outp is interchangeable with inp. 9 inp rf phase input. connect inp to a coupling capacitor. this pin is interchangeable with outp. 11 pfs1 fine phase-slope control input 1. see the typical application circuit . 12 pfs2 fine phase-slope control input 2. see the typical application circuit . 13 pdcs1 digital coarse phase-slope control range input 1. set to logical zero for the steepest slope. 14 pdcs2 digital coarse phase-slope control range input 2. set to logical zero for the steepest slope. 15 v ccp phase-control supply voltage. bypass with a 0.01f capacitor to ground as close to the device as possible. phase section can operate without v ccg . 17 pbin phase breakpoint control input 18 pbexp phase expansion output. connect pbexp to pbraw to use pbin as the breakpoint control voltage. 19 pbraw uncompensated phase breakpoint input 21 v ccg gain-control supply voltage. bypass with a 0.01f capacitor to ground as close to the device as possible. gain section can operate without v ccp . 23 gbp gain breakpoint control input 24 gfs fine gain-slope control input 25 gcs coarse gain-slope control input 27 outg rf gain output. connect outg to a coupling capacitor. outg is interchangeable with ing. ep gnd exposed ground paddle. solder ep to the ground plane.
MAX2010 500mhz to 1100mhz adjustable rf predistorter ______________________________________________________________________________________ 13 phase expansion circuitry figure 1 shows a typical pa s phase behavior with respect to input power. for input powers less than the breakpoint level, the phase remains relatively constant. as the input power becomes greater than the break- point level, the phase begins to compress and deterio- rate the power amplifier s linearity. to compensate for this am-pm distortion, the MAX2010 provides phase expansion, which occurs at the same breakpoint level but with the opposite slope. the overall result is a flat phase response. phase expansion breakpoint the phase expansion breakpoint is typically controlled by a digital-to-analog converter (dac) connected through the pbin pin. the pbin input voltage range of 0v to v cc corresponds to a breakpoint input power range of 0.7dbm to 23dbm. to achieve optimal perfor- mance, the phase expansion breakpoint of the MAX2010 must be set to equal the phase compression breakpoint of the pa. phase expansion slope the phase expansion slope of the MAX2010 must also be adjusted to equal the opposite slope of the pa s phase compression curve. the phase expansion slope of the MAX2010 is controlled by the pfs1, pfs2, pdcs1, and pdcs2 pins. with pins pfs1 and pfs2 ac-coupled and connected to a variable capacitor or varactor diode, the pfs1 and pfs2 pins perform the task of fine tuning the phase expansion sl ope. since off-chip varactor diodes are recommended for this function, they must be closely matched and identically biased. a minimum effective capacitance of 2pf to 6pf is required to achieve the full phase slope range as specified in the electrical characteristics tables. as shown in figure 2, the varactors connected to pfs1 and pfs2 are in series with three internal capacitors on each pin. by connecting and disconnecting these inter- nal capacitors, a larger change in phase expansion slope can be achieved through the logic levels present- ed at the pdcs1 and pdcs2 pins. the phase expan- sion slope is at its maximum when both v pdcs1 and v pdcs2 equal 0v. the phase tuning has a minimal effect on the small-signal gain. gain expansion circuitry in addition to phase compression, the pa also suffers from gain compression (am-am) distortion, as shown in figure 3. the pa gain curve remains flat for input pow- ers below the breakpoint level, and begins to compress at a given rate (slope) for input powers greater than the breakpoint level. to compensate for such gain com- pression, the MAX2010 generates a gain expansion, which occurs at the same breakpoint level with the opposite slope. the overall result is a flat gain response at the pa output. combined phase (degrees) improved phase distortion MAX2010 phase (degrees) MAX2010 phase expansion pa phase (degrees) breakpoint pa phase compression slope p in (dbm) p in (dbm) p in (dbm) figure 1. pa phase compression canceled by MAX2010 phase expansion
MAX2010 500mhz to 1100mhz adjustable rf predistorter 14 ______________________________________________________________________________________ MAX2010 pf_s1 pfs1 pfs2 pdcs1 pdcs2 phase-control circuitry switch control 2 figure 2. simplified phase slope internal circuitry breakpoint slope p in (dbm) p in (dbm) p in (dbm) pa gain (db) MAX2010 gain (db) combined gain (db) pa gain compression MAX2010 gain expansion improved gain distortion figure 3. pa gain compression canceled by MAX2010 gain expansion
MAX2010 500mhz to 1100mhz adjustable rf predistorter ______________________________________________________________________________________ 15 gain expansion breakpoint the gain expansion breakpoint is usually controlled by a dac connected through the gbp pin. the gbp input voltage range of 0.5v to 5v corresponds to a break- point input power range of -2.5dbm to 23dbm. to achieve the optimal performance, the gain expansion breakpoint of the MAX2010 must be set to equal the gain compression point of the pa. the gbp control has a minimal effect on the small-signal gain when operat- ed from 0.5v to 5v. gain expansion slope in addition to properly setting the breakpoint, the gain expansion slope of the MAX2010 must also be adjusted to compensate for the pa s gain compression. the slope should be set using the following equation: where: MAX2010_slope = MAX2010 gain section s slope in db/db. pa_slope = pa s gain slope in db/db, a negative number for compressive behavior. to modify the gain expansion slope, two adjustments must be made to the biases applied on pins gcs and gfs. both gcs and gfs have an input voltage range of 0v to v cc , corresponding to a slope of approximately 0.1db/db to 0.53db/db. the slope is set to maximum when v gcs = 0v and v gfs = +5v, and the slope is at its minimum when v gcs = +5v and v gfs = 0v. unlike the gbp pin, modifying the gain expansion slope bias on the gcs pin causes a change in the part s inser- tion loss and noise figure. for example, a smaller slope caused by gcs results in a better insertion loss and lower noise figure. the gfs does not affect the insertion loss. it can provide up to -30% or +30% total slope varia- tion around the nominal slope set by gcs. large amounts of gcs bias adjustment can also lead to an undesired (or residual) phase expansion/compres- sion behavior. there exists an optimal bias voltage that minimizes this parasitic behavior (typically gcs = 1.0v). control voltages higher than the optimal result in para- sitic phase expansion, lower control voltages result in phase compression. gfs does not contribute to the phase behavior and is preferred for slope control. applications information the following section describes the tuning methodology best implemented with a class a amplifier. other classes of operation may require significantly different settings. gain and phase expansion optimization the best approach to improve the acpr of a pa is to first optimize the am-pm response of the phase sec- tion. for most high-frequency ldmos amplifiers, improving the am-pm response provides the bulk of the acpr improvement. figure 4 shows a typical configu- ration of the phase tuning circuit. a power sweep on a network analyzer allows quick real-time tuning of the am-pm response. first, tune pbin to achieve the phase expansion starting point (breakpoint) at the same point where the pa s phase compression begins. next, use control pins pf_s1, pdcs1, and pdcs2 to obtain the optimal am-pm response. the typical values for these pins are shown in figure 4. to further improve the acpr, connect the phase out- put to the gain input through a preamplifier. the pre- amplifier is used to compensate for the high insertion loss of the gain section. figure 5 shows a typical appli- cation circuit of the MAX2010 with the phase section cascaded to the gain section for further acpr opti- mization. similar to tuning the phase section, first tune the gain expansion breakpoint through the gbp pin and adjust for the desired gain expansion with pins gcs and gfs. to minimize the effect of gcs on the parasitic phase response, minimize the control voltage to around 1v. some retuning of the am-pm response may be necessary. layout considerations a properly designed pc board is an essential part of any high-frequency circuit. in order to minimize external com- ponents, the pc board can be designed to incorporate small values of inductance and capacitance to optimize the input and output vswr (refer to the max2009/ MAX2010 ev kit). the phase section s pfs1 and pfs2 pins are sensitive to external parasitics. minimize trace lengths and keep varactor diodes close to the pins. remove the ground plane underneath the traces can fur- ther help reduce the parasitic capacitance. for best per- formance, route the ground pin traces directly to the grounded ep underneath the package. solder the ep on the bottom of the device package evenly to the board ground plane to provide a heat transfer path along with signal grounding. max slope pa slope pa slope 2010 1 _ _ _ = ? +
MAX2010 500mhz to 1100mhz adjustable rf predistorter 16 ______________________________________________________________________________________ power-supply bypassing bypass each v cc pin with a 0.01f capacitor. exposed pad rf the exposed paddle (ep) of the MAX2010 s 28-pin thin qfn-ep package provides a low inductance path to ground. it is important that the ep be soldered to the ground plane on the pc board, either directly or through an array of plated via holes. MAX2010 gain control phase control power amplifier p out = 7dbm 63 27 outp ing outg p in = 14dbm preamplifier 23 gbp 24 gfs gcs pdcs2 pdcs1 pbin 14 13 17 25 inp pfs1 pfs2 pbexp pbraw 9 11 12 18 19 v pf_s1 = 1.5v v pbin = 0.8v v pdcs1 = 0v v pdcs2 = 5v figure 4. am-pm response tuning circuit table 1. suggested components of typical application circuit designation value type c1, c2, c3, c10 100pf 5% 0402 ceramic capacitors c4, c5 0.01f 10% 0603 ceramic capacitors c6, c8 15pf 5% 0402 ceramic capacitors c11, c12 2.2pf 0.1pf 0402 ceramic capacitors l1, l2 5.6nh 0.3nh 0402 ceramic inductors r1, r2 1k ? 5% 0402 resistors vr1, vr2 skyworks smv1232-079 hyperabrupt varactor diodes
MAX2010 500mhz to 1100mhz adjustable rf predistorter ______________________________________________________________________________________ 17 MAX2010 gain control phase control preamplifier 63 27 outp ing outg p in = 14dbm preamplifier 23 gbp 24 gfs gcs pdcs2 pdcs1 pbin 14 13 17 25 inp pfs1 pfs2 pbexp pbraw 9 11 12 18 19 v pf_s1 = 1.5v v pbin = 0.8v v pdcs1 = 0v v pdcs2 = 5v v gbp = 1v v gfs = 1.5v v gcs = 1v power amplifier gain = 7db figure 5. MAX2010 phase and gain optimization circuit
MAX2010 500mhz to 1100mhz adjustable rf predistorter 18 ______________________________________________________________________________________ typical application circuit 28 27 26 25 24 23 22 7 6 5 4 3 2 1 15 16 17 18 19 20 21 8 9 10 11 12 13 14 MAX2010 gain control phase control gnd* gnd* ing gnd* gnd* outp gnd* v ccg gnd* pbraw pbexp pbin gnd* v ccp gnd* inp gnd* pfs1 pfs2 pdcs1 pdcs2 gnd* outg gnd* gcs gfs gbp gnd* c12 c8 c10 preamplifer optional match compensation c5 c4 control unit c11 vr2 r1 r2 c3 c2 vr1 c1 l1 l2 preamplifer c6 power amplifer *internally connected to exposed ground paddle. chip information transistor count: bipolar: 160 cmos: 240 process: bicmos
MAX2010 500mhz to 1100mhz adjustable rf predistorter maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a maxim product. no circuit patent licenses are implied. maxim reserves the right to change the circuitry and specifications without notice at any time. maxim integrated products, 120 san gabriel drive, sunnyvale, ca 94086 408-737-7600 ____________________ 19 ? 2003 maxim integrated products printed usa is a registered trademark of maxim integrated products. package information (the package drawing(s) in this data sheet may not reflect the most current specifications. for the latest package outline info rmation go to www.maxim-ic.com/packages .) qfn thin.eps d2 (nd-1) x e e d c pin # 1 i.d. (ne-1) x e e/2 e 0.08 c 0.10 c a a1 a3 detail a 0.15 c b 0.15 c a document control no. 21-0140 package outline 16, 20, 28, 32l, qfn thin, 5x5x0.8 mm proprietary information approval title: c rev. 2 1 e2/2 e2 0.10 m c a b pin # 1 i.d. b 0.35x45 l d/2 d2/2 l c l c e e l cc l k k l l 2 2 21-0140 rev. document control no. approval proprietary information title: common dimensions exposed pad variations 1. dimensioning & tolerancing conform to asme y14.5m-1994. 2. all dimensions are in millimeters. angles are in degrees. 3. n is the total number of terminals. 4. the terminal #1 identifier and terminal numbering convention shall conform to jesd 95-1 spp-012. details of terminal #1 identifier are optional, but must be located within the zone indicated. the terminal #1 identifier may be either a mold or marked feature. 5. dimension b applies to metallized terminal and is measured between 0.25 mm and 0.30 mm from terminal tip. 6. nd and ne refer to the number of terminals on each d and e side respectively. 7. depopulation is possible in a symmetrical fashion. 8. coplanarity applies to the exposed heat sink slug as well as the terminals. 9. drawing conforms to jedec mo220. notes: 10. warpage shall not exceed 0.10 mm. c package outline 16, 20, 28, 32l, qfn thin, 5x5x0.8 mm

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